Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics1-3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal-oxide-semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends4 the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties5. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics.

译文

由于电阻和电容延迟增加而导致的处理速度降低是electronics1-3缩小的主要障碍。最小化互连 (连接芯片上不同电子组件的金属线) 的尺寸对于设备的小型化至关重要。互连通过非导电 (电介质) 层彼此隔离。到目前为止,研究主要集中在降低定标互连的电阻上,因为使用与互补金属氧化物半导体兼容的低温沉积工艺集成电介质在技术上具有挑战性。互连隔离材料必须具有较低的相对介电常数 (κ 值),充当防止金属迁移到半导体中的扩散势垒,并且在热,化学和机械上是稳定的。具体来说,《国际设备和系统路线图》建议4开发 κ 值小于2 2028年的电介质。现有的低 κ 材料 (例如氧化硅衍生物,有机化合物和气凝胶) 的 κ 值大于2,并且热机械性能差5。在这里,我们报告了在工作频率分别为100千赫兹和1兆赫兹时具有1.78和1.16的超低 κ 值 (接近空气,κ = 1) 的三纳米厚非晶氮化硼膜。该膜在机械和电方面是坚固的,击穿强度为每厘米7.3兆伏,这超出了要求。横截面成像显示,与参考势垒相反,在非常苛刻的条件下,非晶态氮化硼阻止钴原子扩散到硅中。我们的结果表明,非晶态氮化硼具有出色的低 κ 介电特性,可用于高性能电子设备。

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