Recent experimental chemical vapor depositions of silicon at extreme pressures of ~ 50 MPa (~ 500 atm) have been observed to generate remarkably smooth surfaces not predicted by low-pressure deposition models. In this paper, we propose an anti-shadowing mechanism where the collision of particles within the valleys of the surface growth front leads to smoothening. We conduct Monte Carlo simulations to simulate the evolution of film roughness at pressures between 1 and 50 MPa. We observe that surface roughness approaches an asymptotic invariant value that follows power law behavior as a function of pressure. The film thickness at which invariance begins is shown to have a similar power law behavior with respect to pressure. Our simulated results compare favorably with recent experimental observations and provide insight into the fundamental mechanisms underlying film evolution at pressures between one and hundreds of atmospheres.

译文

:最近观察到的实验性硅化学气相沉积是在〜50 MPa(〜500 atm)的极端压力下产生的,非常光滑的表面是低压沉积模型所无法预测的。在本文中,我们提出了一种防阴影机制,其中表面生长前沿的谷内的粒子碰撞导致平滑。我们进行蒙特卡洛模拟以模拟在1至50 MPa的压力下薄膜粗糙度的演变。我们观察到表面粗糙度接近渐近不变值,该渐近不变值遵循幂律行为作为压力的函数。不变性开始的膜厚度显示出相对于压力具有相似的幂律特性。我们的模拟结果可与最近的实验观察结果相提并论,并提供了对在1个大气压和数百个大气压之间的压力下薄膜演化的基本机理的深入了解。

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