The time-of-flight (ToF) principle is a method used to measure distance and construct three-dimensional (3D) images by detecting the time or the phase difference between emitted and back-reflected optical flux. The ToF principle has been employed for various applications including light ranging and detection (LiDAR), machine vision and biomedical engineering; however, bulky system size and slow switching speed have hindered the widespread application of ToF technology. To alleviate these issues, a demonstration of hetero-integration of GaN-based high electron mobility transistors (HEMTs) and GaAs-based vertical cavity surface emitting lasers (VCSELs) on a single platform via a cold-welding method was performed. The hetero-integrated ToF sensors show superior switching performance when compared to silicon-transistor-based systems, miniaturizing size and exhibiting stable ranging and high-resolution depth-imaging. This hetero-integrated system of dissimilar material-based high-performance devices suggests a new pathway towards enabling high-resolution 3D imaging and inspires broader range application of heterogeneously integrated electronics and optoelectronics.

译文

飞行时间(ToF)原理是一种用于检测距离并通过检测发射光和后向反射光通量之间的时间或相位差来构建三维(3D)图像的方法。 ToF原理已被用于多种应用,包括光测距和检测(LiDAR),机器视觉和生物医学工程。但是,庞大的系统尺寸和缓慢的切换速度阻碍了ToF技术的广泛应用。为了缓解这些问题,通过冷焊方法在单个平台上演示了基于GaN的高电子迁移率晶体管(HEMT)和基于GaAs的垂直腔表面发射激光器(VCSEL)的异质集成。与基于硅晶体管的系统相比,异质集成的ToF传感器显示出卓越的开关性能,可将尺寸最小化,并具有稳定的范围和高分辨率的深度成像。这种基于异种材料的高性能设备的异质集成系统为实现高分辨率3D成像提供了一条新途径,并激发了异质集成电子学和光电子学在更广泛范围内的应用。

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